The stacking-fault energy was determined. Within the limits of accuracy, the energy (75mJ/m2) was found not to change upon doping with 8 x 1018/cm3 of boron and 7 x 1017/cm3 of phosphorus.

TEM of Dislocations under High Stress in Germanium and Doped Silicon. H.Alexander, H.Eppenstein, H.Gottschalk, S.Wendler: Journal of Microscopy, 1980, 118[1], 13–21