The influence of high stresses on the dissociation width of dislocations in pure Ge was investigated. A difference in the mobilities of the partial dislocations was found, and the variation in the measured values was marked. The stacking-fault energy was 60 to 75mJ/m2.

Motion of Partial Dislocations. H.Gottschalk: Journal de Physique - Colloques, 1979, 40[C6], 127-31