Composite dislocation locks created during the deformation of silicon crystals were observed by high-resolution electron microscopy. Splitting distances of 60° created during the deformation revealed a dispersion of 4 to 6nm. The corresponding stacking-fault energy calculations gave values of 64 and 43mJ/m2, respectively.

Non-Dissociated Lomer-Cottrell Locks and Asymmetrically Dissociated B2 Locks in Silicon. M.Elkajbaji, H.O.Kirchner, J.Thibault-Desseaux: Philosophical Magazine A, 1988, 57[4], 631-5