The de-channelling cross-sections of axially channeled MeV H and He ions at dislocations in silicon crystals were studied. The de-channelling cross-section obtained for dislocations in silicon deviated, from a square root dependence on the ion energy, because of dissociation of the dislocations into a pair of partial dislocations having a ribbon of stacking fault between them. The width of the dissociated dislocation was determined by a comparison of the experimental cross-sections with the results of numerical calculations of the de-channelling cross-section at the dissociated dislocation. The width obtained was 9nm for dissociated edge dislocation in silicon. The stacking-fault energy calculated from these widths was 42mJ/m2.

Determination of Stacking Fault Energies in Silicon and Nickel Single Crystals by Channelling Technique. K.Kimura: Journal of the Physical Society of Japan, 1983, 52[3], 895-904