A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation was used to obtain a value of 76mJ/m2 for the stacking-fault energy in silicon.

Lattice Imaging of Faulted Dipoles in Silicon. J.C.H.Spence, H.Kolar: Philosophical Magazine A, 1979, 39[1], 59-63