The transmission electron microscopy weak-beam method was used in a study of dislocation nodes in both deformed single crystals of Si and at the Ge/(111)Si interface. All of the intrinsic nodes were observed to be extended, and measurements of their geometry in Si were used to determine the intrinsic stacking-fault energy, giving values of 58 or 71mJ/m2. Only some 50% of the extrinsic nodes were extended and this was interpreted in terms of an energy barrier to node extension.

Transmission Electron Microscope Observations of Extended and Unextended Dislocation Nodes in Si and Ge/Si Layers using the Weak-Beam Technique. A.G.Cullis: Journal of Microscopy, 1973, 98[2], 191–5