The influence of high stresses on the dissociation width of dislocations in doped Si was investigated. Whereas high B-doping (8.3 x 1018/cm3) had no influence, it was found that in p-doped (7 x 1018/cm3) crystals all of the screw dislocations were narrowed. Both 30° partials had about the same mobility, and 60° dislocations having their 90° partial in front were faster. The stacking-fault energy of pure Si was 55 to 58mJ/m2.

Motion of Partial Dislocations. H.Gottschalk: Journal de Physique - Colloques, 1979, 40[C6], 127-31