The stacking-fault energy in single crystals was determined for various dislocation configurations observed using electron microscopy. The configurations studied were dislocation ribbons and dislocation nodes, and the ratio of the stacking-fault energy to the shear modulus was estimated to be 1.6 x 10-11cm.

Dislocations and Stacking Fault Energy in Silicon Ditelluride. P.Grigoriadis, J.Stoemenos: Journal of Materials Science, 1978, 13[3], 483-91