Stacking-fault energies on the (00•1) plane of ZnO (wurtzite structure) were

estimated to be greater than 43mJ/m2 by means of the weak-beam electron microscopy of dislocations. The stacking-fault energies of this and other II-VI compounds (CdTe, CdS, CdSe, ZnSe, ZnS) were related to material parameters such as the ionicity of the crystal. It was found that the stacking-fault energies of II-VI compounds, together with those of III-V compounds, exhibited a strong correlation with the Phillips-VanVechten charge redistribution index.

Stacking-Fault Energy of II–VI Compounds. S.Takeuchi, K.Suzuki, K.Maeda, H.Iwanaga: Philosophical Magazine A, 1985, 50[2], 171-8