Single crystal plates were deformed in bending at 1700 and 1750C in air. Smoothly curved extended dislocations with total Burgers vectors of (a/3)<11•0> were formed, many of which were arranged in groups of parallel dislocations on basal planes. The slip planes of various groups usually had separations of less than 100nm. A stacking-fault energy of about 1.7mJ/m2 was estimated from the width of the dissociated dislocations. Frequently, dipoles of extended dislocations with much lower widths were formed; in agreement with calculations of their equilibrium configurations. The shapes of dislocations which crossed each other on parallel planes depended upon the sequence of the partial dislocations and could be understood in terms of the mutual elastic interactions of the latter. It was argued that long-range elastic dislocation interactions contributed to the flow stress at high temperatures.

Extended Dislocations and Dislocation Dipoles in Plastically Deformed SiC Single Crystals. M.Bartsch, U.Messerschmidt, A.D.Vasilev: Physica Status Solidi A, 1994, 146[1], 173-84