Defects in various forms of SiC, both monocrystalline and polycrystalline, were examined using transmission electron microscopy. It was noted that dislocations were not as common as stacking faults;, which were observed in all samples. The mechanism of formation of stacking faults was considered, and two types of both intrinsic and extrinsic faults were shown to be possible. The stacking-fault energy of SiC was deduced to be 1.9mJ/m2 by using the extended node method.

Defects in Silicon Carbide. R.Stevens: Journal of Materials Science, 1972, 7[5], 517-21