Dislocations in thin platelets of aluminum nitride, grown from the vapor phase, appeared to be of two types. Some were dissociated into partials of Shockley type, while others were undissociated. A model was proposed for both types. The stacking fault which was associated with the dissociated dislocations consisted of one lamella of the sphalerite structure. The stacking-fault energy was deduced from the width of the ribbons and from the shape of the extended nodes, giving a value of 4mJ/m2.

Dislocations and Stacking Faults in Aluminum Nitride. P.Delavignette, H.B.Kirkpatrick, S.Amelinckx: Journal of Applied Physics, 1961, 32[6], 1098-100