The formation and annihilation processes of stacking faults in fresh ice crystals grown from high-purity water were studied using X-ray topography. Stacking faults with fault vectors of 1/6<20•3> and 1/3<10•0> were observed in the dislocation loops of interstitial-type formed during crystal growth. The formation mechanism of such stacking faults was explained in terms of a segregation process of excess interstitial water molecules which were introduced at the interface and were generated by cooling of the grown crystals. The shrinkage rates of both faulted and unfaulted dislocation loops were measured. The variation in the shrinkage rates for faulted loops was attributed to the large Burgers vector of the loops, as confirmed by their strong contrast in X-ray topographs. The stacking-fault energy for faults with a vector of 1/6<20•3> was deduced to be 0.31mJ/m2 from the rates of both faulted and unfaulted dislocation loops.

Formation and Annihilation of Stacking Faults In Pure Ice. T.Hondoh, T.Itoh, S.Amakai, K.Goto, A.Higashi: Journal of Physical Chemistry, 1983, 87[21], 4040-4