High-quality copper single crystals were quenched from between 750 and 1050C. Analysis of the quenched-in resistivities gave a vacancy formation energy of 1.27eV, in good agreement with the monovacancy formation energy of 1.29eV found by positron annihilation. Isochronal annealing of quenched copper showed two recovery stages; one centred at 0C and one above 200C. In the first stage, nearly 35% of the quenched-in resistivity was annealed out. Vacancies migrated in this stage with an activation energy of 0.74eV. The sum of the measured vacancy formation and migration energies was 2.01eV and agreed well with the monovacancy self-diffusion energy of 2.06. The Formation and Migration Energies of Vacancies in Quenched Copper. R.R.Bourassa, B.Lengeler: Journal of Physics F, 1976, 6[8], 1405-13