The resistivity of a wire was measured repeatedly in situ from room temperature to 1064C, and back again. The measured curves were fitted to a 2nd-order polynomial between 400 and 700C and were extrapolated to higher temperatures. Differences in electrical resistivity between the extrapolated and measured curves were attributed to vacancy-type defects whose concentration increased with increasing temperature. The effective formation energy of vacancies was deduced to be 1.20eV and the electrical resistivity, at the melting point, which was due to vacancies was estimated to be 1.45 x 10-7Ωcm. These results were in approximate agreement with published data. Analysis of these data confirmed the results which had been obtained, during the past 40 years, on the formation energy of vacancies, on the activation energy for the migration of

vacancies and divacancies, and on the binding energy of divacancies. These values were 1.03, 1.06, 0.64 and 0.20eV, respectively. In addition the formation and migration entropies of single vacancies and divacancies were obtained. A value of 1.9 x 10-4Ωcm was obtained for the electrical resistivity of a vacancy; assuming an effective vacancy concentration at the melting point of 7.6 x 10-4. It was shown that Matthiessen's rule was obeyed and that the electrical resistivity of a vacancy was approximately the same at 4K and at the melting point.

Properties of Vacancies in Copper Determined by Electrical Resistivity Techniques. W.Schule: Zeitschrift für Metallkunde, 1998, 89[10], 672-7