Residual resistivity methods were used to characterize high-purity samples which had been saturated with D or T, to up to 300ppm[at], from the gaseous phase and had been irradiated with 5MeV electrons at 80K. It was shown that interstitial-impurity complexes with D or T formed during irradiation and had a binding energy of 0.33eV. They were stable at up to 150K. The formation and dissociation of complexes with vacancies had no effect upon the residual resistivity.

Interaction of Radiation Defects with Deuterium and Tritium Atoms in Nickel. V.L.Arbuzov, S.E.Danilov, A.E.Davletshin, J.N.Zuev, V.V.Andryushin: Physics of Metals and Metallography, 1998, 85[5], 556-8