Channelling of D ions was used to study the accumulated disorder on the Si and C sub-lattices in 6H-type crystals which had been bombarded with 50keV He+ ions at 100 or 300K. The relative disorder on each sub-lattice exhibited a sigmoidal dependence upon dose. The C disorder was higher at low doses; thus suggesting a smaller C displacement energy. At ion fluences above 1016/cm2, more C defects recovered during irradiation; thus indicating a lower activation energy for C migration and recombination. Isochronal annealing data showed that the recovery behaviours on the Si and C sub-lattices were similar. The annealing of a buried amorphous layer, produced by a dose of 2.5 x 1016/cm2 at 100K, exhibited epitaxial growth at a rate of 0.154nm/K at 370 to 870K.

Deuterium Channeling Analysis for He+-Implanted 6H-SiC. W.Jiang, S.Thevuthasan, W.J.Weber, R.Grotzschel: Nuclear Instruments & Methods in Physics Research B, 2000, 161-163, 501-4