The concentrations of antisite B and normal B atoms on Ga sites were measured, by using optical absorption techniques, in B-doped crystals which were quenched from various temperatures. The formation energy of an antisite B in GaAs was deduced to be 1.7eV.

Formation Energy of Antisite Boron in GaAs. M.Suezawa, K.Sumino: Japanese Journal of Applied Physics, 1993, 32[II-8a], L1037-8