The effect of 2.2MeV fast electron irradiation to a dose of 1016/cm2, followed by annealing (150 to 350C, 600 to 36000s), upon the formation and dissociation of VAsZnGa pairs in Zn-doped p-type crystals was studied. An analysis of the formation and dissociation kinetics of such pairs indicated that the diffusivity of radiation-induced As vacancies was equal to 1.5 x 10-18, 10-17 and 5 x 10-17cm2/s at 150, 175 and 200C, respectively. The migration energy was estimated to be equal to 1.1eV, while the binding energy of VAsZnGa pairs was deduced to be 0.5eV, and their dissociation energy was 1.6eV.

Electrical Characterization of Irradiation Plus Annealing – Induced VAsZnGa Pairs in p-Type GaAs (Zn) Crystals. K.D.Glinchuk, A.V.Prokhorovich: Crystal Research and Technology, 1996, 31[3], 335-42