The effect of temperature upon the processes that occurred during, and after, ion-beam milling of Hg0.8Cd0.2Te with low-energy Ar ions (0.5 to 1eV) was demonstrated. An almost exponential dependence upon temperature of the depth of the p-n junction that was created during ion milling was observed at temperatures ranging from 77 to 300K. A theoretical fit that was based upon the present model yielded a migration energy, for Hg interstitials, of 0.120eV.

Determination of the Migration Energy of Hg Interstitials in (HgCd)Te from Ion Milling Experiments. E.Belas, R.Grill, J.Franc, A.Toth, P.Höschl, H.Sitter, P.Moravec: Journal of Crystal Growth, 1996, 159, 1117-22