The diffusion of impurity atoms, their location in the host lattice and the formation and migration of vacancies were studied by using ion beam techniques and positron spectroscopy. A novel procedure was developed for the determination of depth profiles, using Rutherford back-scattering spectrometry, from samples with rough surfaces. The formation and migration of vacancies was studied by combining the exponential dependence, of the vacancy concentration upon formation energy, with a probability model for the formation of VP-Zn complexes. The migration energy was found to be 0.4eV, while the formation energy was 1.0 to 1.2eV; depending upon the position of the Fermi level.

Diffusion of Impurities and Vacancies in Compound Semiconductors J.Slotte: Acta Polytechnica Scandinavica, Applied Physics Series, 1999, 222, 2-44