Self-diffusion in Bridgman-type single crystals was studied, at temperatures ranging from 400 to 500C, by using 114mIn and 125Sb radiotracers. An anodic oxidation technique was used for serial sectioning, and the penetration profiles were fitted to an error function solution of the diffusion equations. It was found that the self-diffusion of In could be described by:

D(cm2/s) = 6.0 x 10-7[-1.45(eV)/kT]

while the self-diffusion of Sb could be described by:

D(cm2/s) = 5.35 x 10-4[-1.91(eV)/kT]

The migration enthalpies of In and Sb atoms were estimated to be equal to 0.66 and 0.70eV, respectively, and the corresponding formation enthalpies were 0.79eV for an In vacancy and 1.21eV for an Sb vacancy.

Self-Diffusion in Indium Antimonide. A.Rastogi, K.V.Reddy: Journal of Applied Physics, 1994, 75[10], 4984-9