The formation and migration energies of a vacancy and an interstitial were studied by detecting complexes of point defects and hydrogen atoms using optical absorption measurements. The formation energies of the vacancy and interstitial were found to be 3.85 and 4.8eV, respectively. The migration energies of the vacancy and interstitial were 0.45 and 0.49eV, respectively. Using these energies, the activation energies of the vacancy- and interstitial-mediated self-diffusion were determined to be 4.30 and 5.3eV, respectively. The former energy was especially important because there had been no study in which vacancy-mediated diffusion had been successfully determined.

Formation and Migration Energies of a Vacancy and an Interstitial in a High-Purity Si Crystal Determined by Detecting Complexes of Point Defects and Hydrogen: Evaluation of Activation Energies of Self-Diffusion. M.Suezawa, N.Fukata, Y.Iijima, I.Yonenaga: Japanese Journal of Applied Physics, 2014, 53[9], 091302