A thermalization-energy concept was presented which unified the time- and temperature-dependence of dangling-bond defect creation and removal in amorphous thin films. It was found that there was a distribution of energy barriers to defect creation and removal, with the most probable energy barrier being 1.0eV for defect creation and between 1.1 and 1.5eV for defect removal; depending upon how the defects were initially created. It was suggested that defect creation proceeded via Si-Si bond-breaking, whereas defect removal proceeded via the release of H from a SiHD complex.

Unification of the Time and Temperature Dependence of Dangling-Bond Defect Creation and Removal in Amorphous Silicon Thin-Film Transistors. S.C.Deane, R.B.Wehrspohn, M.J.Powell: Physical Review B, 1998, 58[19], 12625-8