It was noted that the use of high ramp rates (>400C/s) during rapid thermal annealing after ion implantation led to improvements in junction depth and the reverse narrow-channel effect. By modelling, it was found that increasing the heating rate permitted clusters, with dissociation energies lower than the maximum of 3.5 to 3.7eV, to survive to higher temperatures. This improved survival delayed any increase in Si interstitial concentration near to the top of an annealing spike; and decreased profile spreading.

Ramp-Rate Effects on Transient Enhanced Diffusion and Dopant Activation. M.Y.L.Jung, R.Gunawan, R.D.Braatz, E.G.Seebauer: Journal of the Electrochemical Society, 2003, 150[12], G838-42