Specimens of high-purity material, with a dopant concentration of 4 x 1012/cm3, were sealed into quartz capsules with H2, annealed at high temperatures and quenched in water. Their optical absorption spectra were measured at about 6K. Six sharp optical absorption peaks were observed at 3618.1, 2131.5, 2062.0, 1838.5, 817.6 and 776.2/cm. The 3618.1, 1838.5 and 817.6/cm peaks were attributed to H2, H2* and H2*, respectively. The activation (or formation) energies of H2 and H2* were deduced from the quenching-temperature dependence of the peak intensities. Those of H2 (3618/cm peak) and H2* (1838/cm peak) were equal to about 2.2 and 4.8eV, respectively.

H2-Related Defects in Si Quenched in H2 Gas Studied by Optical Absorption Measurements M.Suezawa: Japanese Journal of Applied Physics - 2, 1999, 38[5A], L484-6