The annealing behaviour of amorphous layers which had been produced by the MeV Si-ion implantation of 6H-type material was investigated by means of step-height measurements and X-ray diffraction analysis. Two annealing stages were found, each of which caused densification of the amorphous layer. At temperatures below 700C, defect annealing processes were responsible for the densification. Amorphous states with continuously varying densities could be produced in the first annealing stage. Annealing at temperatures above 700C was characterized by a combination of defect annealing and recrystallization. It was shown that the crystallization mode changed, with increasing temperature, from nucleate growth at 800C to epitaxial re-growth at 1000C.

Annealing and Recrystallization of Amorphous Silicon Carbide Produced by Ion Implantation. A.Hofgen, V.Heera, F.Eichhorn, W.Skorupa, W.Moller: Materials Science and Engineering B, 1999, 61-62, 353-7