Crystals were doped with Au by sealing them in quartz capsules, together with a piece of Au wire, annealing at high temperatures, and quenching in water. The specimens were then doped with H by annealing them in a 1atm H atmosphere, and quenching. The formation energy of interstitial Si atoms in the Au-doped material was deduced from measurements of the optical absorption that was due to H which was bound to interstitial Si. The formation energy of interstitial Si was estimated to be equal to about 2.1eV, from the temperature dependence of the 2223/cm line.

Formation Energy of Interstitial Si in Au-Doped Si Determined by Optical Absorption Measurements of H Bound to Interstitial Si. M.Suezawa: Japanese Journal of Applied Physics - 2, 1998, 37[3A], L259-61