A new effect was observed experimentally under irradiation with visible light (0.2 to 1.5W/cm2, 8s). This involved an increase in microhardness on the side opposite to the irradiated side, and was not purely thermal in nature. After irradiation, the changes decreased exponentially with time; with an activation energy of 0.75eV. This value was characteristic of the migration and reorientation of one of the types of intrinsic interstitial atom. The effect was explained qualitatively on the basis of a model which had previously been proposed for the long-range effect of ion bombardment.

Long-Range Influence of Weak Optical Irradiation of Silicon. D.I.Tetelbaum, V.A.Panteleev, M.V.Gutkin: Pisma v Zhurnal Eksperimentalnoi i Teoreticheskoi Fiziki, 1999, 70[6], 381-5 (JETP Letters, 1999, 70[6], 385-9)