Stacking faults in B-implanted Si give rise to streaks or rods of scattered X-ray intensity normal to the stacking fault plane. The diffuse scattering rods were used to follow the growth of faults as a function of time when B-implanted Si was annealed at 925 to 1025C. From the growth kinetics, an activation energy for interstitial migration in Si of 1.98eV was obtained. Fault intensity and size versus time results indicated that faults did not shrink and disappear, but were instead annihilated by a dislocation reaction mechanism.

X-ray Diffuse Scattering Study of the Kinetics of Stacking Fault Growth and Annihilation in Boron-Implanted Silicon. D.Luebbert, J.Arthur, M.Sztucki T.H.Metzger, P.B.Griffin, J.R.Patel: Applied Physics Letters, 2002, 81[17], 3167-9