A quantitative investigation was made of the evolution of oxygen and vacancy (V) complexes in neutron-irradiated Czochralski silicon. It was found that the VO complexes could transfer into VO2 complexes via a metastable O-V-O intermediate. The activation energy for the VO complex annihilation was 1.89eV, much larger than that 1.52eV for the VO2 complex generation. This suggested that the VO annihilation was not only completed by transferring into VO2 complexes, but was dominated by dissociating into individual oxygen and vacancy.

Quantitative Study of the Evolution of Oxygen and Vacancy Complexes in Czochralski Silicon. X.Yu, L.Chen, P.Chen, D.Yang: Applied Physics Express, 2012, 5[2], 021302