The annealing of A-centers (VO) and complex centers consisting of interstitial C atoms and substitutional C atoms (CiCs), in n-type Si irradiated with fast electrons or 60Co γ quanta was analyzed. By comparing the results of calculations with published experimental data, obtained by measuring the concentration of centers with the level Ec – 0.17eV during isochronal heat treatments of irradiated n-type Si, the dissociation energy of the CiCs complex was estimated to be 1.10eV. The activation energy for annealing of this center was found to be about 2.0eV. The dissociation energy of the A-center was estimated to be 1.94eV.

Dissociation Energies of a CiCs Complex and the A Center in Silicon. N.I.Boyarkina, S.A.Smagulova, A.A.Artemev: Semiconductors, 2002, 36[8], 845-7