An investigation was made of the formation and annihilation of H-point defect complexes which were formed in C-doped material by heating at high temperatures and quenching in H gas. Specimens of C-doped material were sealed into quartz capsules, together with H gas at 0.8 to 1.5atm, at high temperatures and were heated at high temperatures for 1h; followed by quenching in water. Optical absorption spectra were measured at about 7K by using Fourier-transform infra-red spectrometry. Several optical absorption peaks which were due to H-point defect complexes were observed. Optical absorption peaks which were observed at 2192 and 2203/cm were attributed to the Si-H stretching mode of three H atoms which were bound to a vacancy (VH3 defect). Formation of a VH4 defect was attributed to reactions between H and the VH3. The activation energy for dissociation of the VH4 defect was estimated, on the basis of isothermal annealing experiments, to be equal to about 2.5eV.

Formation and Annihilation of H-Point Defect Complexes in Quenched Si Doped with C. N.Fukata, M.Suezawa: Journal of Applied Physics, 2000, 88[8], 4525-30