The lattice location of ion-implanted Cu was determined by using the emission channelling technique. The angular distribution of the β- particles which were emitted by 67Cu was monitored following the room-temperature implantation of single crystals, and annealing at up to 600C. Most of the Cu was found close to substitutional sites but with a significant displacement, probably 0.05nm, along <111> directions towards the bond-center position. The activation energy for the dissociation of near-substitutional Cu was estimated to be 1.8 to 2.2eV.

Lattice Location and Stability of Ion Implanted Cu in Si U.Wahl, A.Vantomme, G.Langouche, J.G.Correia, Isolde: Physical Review Letters, 2000, 84[7], 1495-8