Complexes of point defects and impurities in electron-irradiated n-type Czochralski-grown Si, pre-doped with H, were studied and the results were compared with those in high-purity specimens. The specimens were n-type (1.3Ωcm) Czochralski Si. They were irradiated with 3MeV electrons at room temperature, after H doping. Optical absorption spectra were measured at 7K. The spectra were recorded in 3 wave-number ranges: 800-1000, 1800-2200 and about 2700/cm. In the first range, optical absorption peaks were observed due to H2*, VO0 (neutral charge state) and VO- (negatively charged state). The concentration of the VO pair in n-type specimens was higher than that in high-purity specimens. In the second range, peaks were observed due to H*2 and complexes of self-interstitials and H2. In the third range, peaks were observed due to V2. During isochronal annealing, VO0 decreased in 2 stages, 75-200 and 200-400C. In the first stage, 2 new peaks appeared at 2126 and 2151/cm. They disappeared in the second stage. The activation energies of the first and second stages were about 0.8 and 1.6eV, respectively.

Complexes of Point Defects and Impurities in Electron-Irradiated n-Type Cz-Si Pre-Doped with Hydrogen. A.Nakanishi, N.Fukata, M.Suezawa: Physica Status Solidi B, 2003, 235[1], 115-20