The thermal stability and activation energy of H plus point-defect complexes were investigated. The specimens were doped with H by annealing in the gas, and quenching. They were then irradiated with 3MV electrons, at room temperature, before being isochronally or isothermally annealed. The optical absorption spectra of H plus point-defect complexes were measured at 7K. The 2122, 1838 and 817/cm peaks disappeared below 200C during isochronal annealing. On the other hand, peaks at 2223 and 2166/cm formed at above 125 and 175C, respectively. It was deduced, from isothermal annealing experiments, that the binding energies of H2* (1838/cm peak), I-H2 (1987/cm peak) and V-H2 (1990/cm peak) were about 1.5, 2.0 and 2.0eV, respectively. The generation of a 2223/cm peak was attributed to a reaction between H2 and the 2122/cm defect.

Thermal Properties of H-Related Complexes in Electron-Irradiated Si Doped with H M.Suezawa: Journal of Applied Physics, 1999, 86[9], 4865-70. See also: Physica B, 1999, 273-274, 224-7