The impurity dependence of the formation energy of vacancies was investigated. The doped impurities were C, N and Pt. The specimens were heated in H2 gas at high temperatures for 1h, followed by quenching in water. The optical absorption spectra were measured at about 5K. The formation energies of V in Si were found to depend upon doped impurities, and those in C-, N- and Pt-doped Si were determined to be about 3.2, 3.2 and 2.7eV, respectively. The results for magnetic field-applied Czochralski Si showed that the formation energy of V was not significantly different between float-zone and Czochralski material.

Impurity Dependence of Vacancy Formation Energy in Silicon Determined by a New Quenching Method. N.Fukata, M.Suezawa, A.Kasuya: Japanese Journal of Applied Physics - 2, 2002, 41[10A], L1034-6