By applying a new quenching method, the formation energy of vacancies in high-purity Si were determined. Specimens were heated in H2 gas at high temperatures for 1h followed by quenching in water. By this method, vacancies were quenched in the form of complexes with H and the vacancy formation energy could be determined from the quenching temperature dependence of the intensity of the optical absorption peak due to the complexes. The vacancy formation energy of Si was determined to be about 4.0eV. This value was in good agreement with results of recent theoretical calculations.

Vacancy Formation Energy of Silicon Determined by a New Quenching Method. N.Fukata, A.Kasuya, M.Suezawa: Japanese Journal of Applied Physics - 2, 2001, 40[8B], L854-6