By using radioactive 119Sb and 119mSn probe atoms, iso-concentrational P-doped material, and 119Sn Mössbauer emission spectroscopy, the formation of probe atom-vacancy complexes was observed as a function of the rapid thermal annealing temperature and the dopant level. It was found that, at donor concentrations of 1020 to 2 x 1020/cm3, simple impurity-vacancy complexes formed. However, triple complexes which involved P dopants were expected to form at higher P donor concentrations. The temperature and dopant concentration dependences could be satisfactorily modelled in terms of conventional complex formation models. These calculations indicated impurity-vacancy binding energies which ranged from 1.5 to 2.1eV, for both Sb and Sn probe atoms.

G.Weyer, M.Fanciulli, K.Freitag, A.N.Larsen, M.Lindroos, E.Müller, H.C.Vestergaard, Isolde: Materials Science Forum, 1995, 196-201, 1117-22