The formation kinetics of O-H complexes which gave rise to an infra-red absorption line at 1075.1/cm were studied in Czochralski-grown crystals at temperatures ranging from 30 to 150C, and H was incorporated via high-temperature (1200C) in-diffusion from H2 gas. It was found that the observed kinetics could be explained as being due to the interaction of mobile neutral H-related species with bond-centered O atoms. The binding energy of the O-H complex was estimated to be 0.28eV. The activation energy for the migration of the H-related species which was responsible for the formation of the O-H complexes was found to be 0.78eV. It was shown that atomic H and H2* (a complex which contained two H atoms; one at a bond-centered site and one at an anti-bonding site) could not account for the H-O interaction. Molecules of H at tetrahedral interstitial sites were suggested to be the species which interacted with interstitial O atoms to form the complex that gave rise to an absorption line at 1075.1/cm.

Hydrogen–Oxygen Interaction in Silicon at Around 50C. V.P.Markevich, M.Suezawa: Journal of Applied Physics, 1998, 83[6], 2988-93