Parameters of the defect complex formation in semiconductors could be determined from the experimental curves of isochronous annealing. By processing data on the annealing of Au–Fe complexes in Si, estimates were obtained for the complex formation energy (0.8eV) and the activation energy of Fe diffusion (0.9eV).

Determining Defect Complex Formation Parameters from Isochronous Annealing Curves. S.V.Bulyarskiĭ, V.V.Svetukhin: Technical Physics Letters, 2003, 29[2], 88-9