Samples of p-Si:B were irradiated with 8MeV electrons. The values of the activation energies for the annealing of K centers and (V + B) complexes, as deduced from isochronal annealing curves for these centers, were found to be 0.915 and 1.6eV, respectively. Volumetric measurements of the photo-voltage over the irradiated region made it possible to estimate the migration energy for vacancies. The latter was found to be about 0.6eV for positively charged vacancies and about 0.345eV for neutral vacancies.

Migration Energy of Vacancies in p-Type Silicon Crystals. T.A.Pagava, Z.V.Basheleĭshvili: Semiconductors, 2003, 37[9], 1033-6