A quantitative agreement between predicted and observed micro-defect patterns was obtained; thus demonstrating the validity of the assumptions of Voronkov’s theory with regard to Czochralski crystals. The formation of micro-defects in a grown crystal was governed by the type and concentration of the intrinsic point defects in the growing crystal. These parameters were controlled by the ratio of the growth rate to the axial temperature gradient near to the crystal/melt interface and by the diffusional redistribution of point defects during cooling. By comparing calculated point-defect profiles with observed micro-defect patterns, the activation energy for point defect migration was estimated to be between 0.8 and 1.9eV at temperatures ranging from the melting point to 1273K.

N.I.Puzanov: Neorganicheskie Materialy, 1996, 32[1], 7-16 (Inorganic Materials, 1996, 32[1], 1-9)