The formation energy of two Li defects was determined in material which had been produced by means of molecular beam epitaxy. The energies for interstitial and substitutional Li were found to be 0.64 and 0.51eV, respectively. It was shown that Li introduced a negligible elastic distortion of the matrix lattice. It was found that an increase in the [Lii]/[LiZn] ratio with increasing Zn/Se flux ratio could be explained by a decrease in the formation energy of the Li interstitial.

Energy of Formation of Li Defects in ZnSe Deposited by Molecular Beam Epitaxy. A.N.Krasnov: Journal of Crystal Growth, 1994, 141[1,2], 89-92