Following the implantation of spin-polarized radioactive 12B into nominally undoped single crystals, to concentrations of about 108/cm3, three different B-defect configurations could be distinguished. An unperturbed fraction at cubic lattice sites was identified, using dipolar line-width analysis, as being substitutional BZn+. A smaller fraction was also attributed to BZn+; but with nearby Se vacancies. A third, paramagnetic, configuration was tentatively attributed to isolated interstitial Bi2+. Temperature-dependent measurements revealed the conversion of Bi to BZn; with an activation energy of 0.61eV. This was attributed to Bi migration. After annealing, a BZn fraction of about 85% was found. An appreciable inward relaxation of the nearest Se, and next-nearest Zn, atoms around the BZn+ donor was observed.

Defect Properties of Implanted Boron in ZnSe. B.Ittermann, G.Welker, F.Kroll, F.Mai, K.Marbach, D.Peters: Physical Review B, 1999, 59[4], 2700-12