A Doppler broadening annihilation spectroscopic investigation was made of the properties of irradiated samples of SiO2/Si(100); with 117nm-thick oxide layers, grown in dry O2, on p-type and n-type substrates. The samples were irradiated with -rays and X-rays to doses which ranged from 7 x 104 to 9 x 106rad and 2000mJ/cm2, respectively. Changes in the Doppler broadening lineshape parameter after irradiation, and its recovery during isochronal annealing, were used to deduce that an activation energy of 1.48 to 1.61eV was required for the annealing of the defects.

Positron Trap Centers in X-Ray and γ-Ray Irradiated SiO2. R.Khatri, P.Asoka-Kumar, B.Nielsen, L.O.Roellig, K.G.Lynn: Applied Physics Letters, 1993, 63[3], 385-7