With the existence of depletion layer, the intrinsic donor defect structure of ZnO ceramics was investigated by broadband dielectric spectroscopy in a wide temperature range. Two loss peaks originating from electronic relaxation of O vacancy and Zn interstitial, respectively, were observed in ZnO ceramics simultaneously, implying the coexistence of these two intrinsic defects. The corresponding activation energy for electronic relaxation of Zn interstitial and O vacancy were 0.26 and 0.36eV, respectively, which was consistent with other reports

Characterization of Intrinsic Donor Defects in ZnO Ceramics by Dielectric Spectroscopy. P.Cheng, S.Li, L.Zhang, J.Li: Applied Physics Letters, 2008, 93[1], 012902