The diffusivity of H in B-doped material was deduced from the redistribution profiles, under thermal annealing, of an initial step-like profile of (B,H) pairs located in a shallow region below the surface. For B concentrations ranging from 2 x 1019 to 1020/cm3, the profiles were Gaussian-like and effective diffusion coefficients could be calculated. A (B,H) pair dissociation energy of 2.5eV was deduced from the diffusion activation energy. At lower B concentrations, the redistribution of H was inhibited by the presence of deep traps for H which might be associated with structural defects.

Trap Limited Diffusion of Hydrogen in Boron-Doped Diamond. Z.Teukam, D.Ballutaud, F.Jomard, J.Chevallier, M.Bernard, A.Deneuville: Diamond and Related Materials, 2003, 12[3-7], 647-51