The build-up of damage in 4H-type epitaxial layers which were implanted with 100 or 180keV Al ions, to doses ranging from 1013 to 1015/cm2, was studied by means of transmission electron microscopy and channelling-mode Rutherford back-scattering spectroscopy. The implantation was performed at temperatures of between ambient and 800C. In the case of as-implanted samples, the channelling results showed that most of the damage could be avoided by implantation at 200C, but complete removal of the damage was not possible; even at an implantation temperature of 800C. After post-implantation annealing at 1600C, a distribution of planar faults was observed by using transmission electron microscopy. Their size was around 10nm, but increased with increasing annealing temperature.

Damage Evolution in Al-Implanted 4H SiC. A.Hallén, P.O.A.Persson, A.Y.Kuznetsov, L.Hultman, B.G.Svensson: Materials Science Forum, 2000, 338-342, 869-72