The (00•1)Si and (00•¯1)C faces of n-type 6H-samples were scratched, and annealed in order to introduce fresh dislocations. Transmission electron microscopic investigations of the as-deformed C-face showed that this led mainly to the nucleation of partial dislocations of both core-types; depending upon the distance from the scratches. In the case of the Si-face, mainly partial Si(g) dislocations were created. By using thermally stimulated capacitance techniques, it was found that the majority carrier traps which resulted from deformation were located mainly in the upper third of the band-gap; regardless of the nature of the deformed face. The rather low dislocation density was insufficient to explain the large observed compensation, and other defects which were generated by the deformation had to be taken into account.

Electrical Study of Dislocated Si- and C-Faces of n-Type 6H-SiC. J.L.Demenet, V.Tillay, J.F.Barbot: Physica Status Solidi A, 1999, 171[1], 319-24